Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure

Samsung Electronics Co., Ltd., a global leader in advanced memory technology, showcased its latest AI memory innovations at Future of Memory and Storage (FMS) 2026 in Santa Clara, California. Samsung presented its latest AI memory portfolio and technology roadmap, including a preview of its zHBM and zNAND-O concept models, the industry-first introduction of its V10 BV-NAND with 400-plus layers, and a comprehensive range of solutions designed to advance future AI infrastructure. Samsung unveiled the industry's first concept models of zHBM and zNAND-O. Designed for advanced AI computing, zHBM presents a new memory architecture that vertically stacks HBM directly above AI accelerators, moving beyond conventional designs in which HBM is positioned alongside the processor. By minimizing the distance that data travels between the AI processor and memory, zHBM is designed to deliver higher bandwidth and improved power efficiency. A next-generation interface system incorporating zHBM is expected to deliver approximately eight times the performance of HBM5. With next-generation wafer bonding technology, zHBM can achieve more than 10 times the memory density of HBM5 while enhancing energy efficiency threefold and reducing thermal resistance by more than half. Samsung also introduced zNAND-O, a next-generation high-performance NAND architecture built on its V-NAND technology. Samsung unveiled V10 BV-NAND, featuring its new Bonding V-NAND architecture with more than 400 layers, increasing memory density by approximately 58% over the previous generation (V9). Samsung also presented its latest AI memory and storage portfolio including HBM4E, HBM5, LPDDR5X-PIM and PM1763.