Applied Materials Launches Deposition and Etch Systems for 3D Chip Scaling
Summary
Key Takeaways
Applied Materials has launched two manufacturing systems targeting high-aspect-ratio 3D structures for AI chip fabrication.
The Centris Spectral SiN ALD is a microwave plasma atomic layer deposition system for uniform dielectric film deposition in GAA transistor contact liners, reducing resistance and capacitance. It addresses non-uniformity issues in conventional processes for high-aspect-ratio structures.
The Producer Selectra Mo Etch is a selective molybdenum etch system using dry processing to replace wet methods for 3D NAND word line separation. Dry processing reduces cell-to-cell variation and improves storage density consistency, and it has passed volume production validation. Molybdenum interconnect is a next-generation copper replacement, and Selectra Mo Etch is the first production-ready molybdenum etch solution.
Both systems target AI chip manufacturing needs, supporting GAA transistors (standard for sub-2nm nodes) and high-layer-count 3D NAND (exceeding 300 layers). TSMC and Samsung have already procured Applied Materials' GAA-related equipment.
Why It Matters
Applied Materials is defending against Lam Research and Tokyo Electron in GAA and 3D NAND etch by packaging SiN ALD and molybdenum etch as proprietary modules, locking fabs into high-value process steps. The release downplays molybdenum's RF loss and thermal expansion mismatch issues in advanced interconnects, and the dry etch's sidewall damage control remains inferior to wet processes for >300-layer 3D NAND, risking word line leakage. The proprietary microwave plasma chamber in Centris Spectral SiN ALD creates hardware lock-in, stripping fabs of process flexibility and increasing TCO for AI memory stacks.
PRO Decision
【Vendors】Lam Research and Tokyo Electron should accelerate atomic layer etching (ALE) and selective deposition hybrid solutions to counter Centris Spectral SiN ALD's uniformity claims, and offer copper-ruthenium hybrid interconnect wet etch alternatives to erode Applied's molybdenum etch market share with lower cost and proven processes.
【Enterprises】CIOs and architects should demand independent benchmarking of process modules, focusing on molybdenum's high-frequency signal integrity and thermal cycle stress reliability, to avoid lock-in. Insist on multi-chemistry etch compatibility in 3D NAND expansion to retain process flexibility.
【Investors】Beware of supplier concentration risk behind this launch; GAA and 3D NAND equipment markets are contested by Lam and TEL. Monitor Lam Research's Syndion etch platform and TEL's Tactras deposition system for better cost profiles in volume production.
Get 3-5 key AI infrastructure signals weekly →
💬 Comments (0)